High accelerating voltage EBIC microscopy for screen printed single and multicrystalline silicon solar cells

High accelerating voltage electron beam induced current HAV-EBIC Microscopy was used to investigate both single and multicrystalline silicon solar cells to determine a correlation between EBIC and solar cell performance.We observed that HAV-EBIC (200 keV) correlate well with measured solar cell properties because HAV-EBIC, like, light probes a silicon sample to a depth of hundreds of missions.