Improvement of Characteristics of Ga-Doped ZnO Grown by Pulsed Laser Deposition Using Plasma-Enhanced Oxygen Radicals

cm at a radio-frequency input power of 100 W. Average visible 500‐700 nm transparency was improved from 83.7% in the Ga-doped ZnO grown without oxygen radicals to 93.1% in the samples grown with oxygen radicals. The use of oxygen radicals also increased the near-IR 800‐3000 nm transparency. The figure of merit of the Ga-doped ZnO film grown at a radio frequency input power of 100 W showed a maximum value of 0.12 1