Linearity Performance Analysis of Hetero-dielectric Core-shell TFET

The manuscript presents, linearity performance parameters for a new hetero dielectric shifted inner gate core-shell (nanotube) structure (HD-SIG-CS-TFET) for the applications like low standby power and radio frequency ICs (RFICs). In this proposed device core gate workfunction is similar to the shell gate. The core gate provides better electrostatic controllability and also increases the turn-on capability of the core-shell TFET. In addition, the manuscript also gives a comparative analysis of high-k gate dielectric (HfO 2 ) in terms of gate oxide channel interface trap charge (ITCs) performed on core-shell structures. The crucial linearity metrics for low power radio frequency application of core-shell TFET structures are also examined in terms of VIP2, VIP3, IIIP3, IMD3, and 1 dB compression point for negative(-ve), neutral (0), and positive(+ve) ITCs.