Simulation of sputtering from an isolated conductor surrounded by a dielectric during plasma etching

Abstract We investigate the action of ion flows from a plasma onto the surface of a flat conductor lying on an insulator, with width less than the plasma Debye length. The model allows study of the processing with a steady state or pulsed potential on the microwire. The shape of pulses has been synthesized to provide the most homogeneous distribution of the etching rate over the microwire surface.