Linearity Improvement with AlGaN Polarization-Graded Field Effect Transistors with Low Pressure Chemical Vapor Deposition Grown SiNx Passivation
2019
In this letter, we discuss the application of low pressure chemical vapor deposition (LPCVD) grown SiNx passivation-first process to improve the power density and linearity performance of a metal oxide chemical vapor deposition (MOCVD) grown AlGaN channel polarization-graded field-effect transistor (PolFET). Significantly improved dispersion behavior was observed compared to plasma enhanced chemical vapor deposition (PECVD) grown SiNx passivation. The Current collapse at 30 V drain quiescent condition for pulsed I-V was reduced to 8% (LPCVD) from 25% (PECVD). 10 GHz load-pull measurement showed a maximum output power density of 3.4 W/mm with a peak power added efficiency (PAE) of 40%. Two-tone intermodulation distortion measurement at 10 GHz for devices with $150\boldsymbol {\mu }\text{m}$ width revealed an OIP3 of 39 dBm and an excellent corresponding linearity figure of merit OIP3/ $\text{P}_{{\textit {DC}}}$ of 13.3 dB. This is the best device level OIP3/ $\text{P}_{{\textit {DC}}}$ reported to date at X-band for III-Nitride microwave transistors.
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