Introduction of the SHX‐III System, a Single‐Wafer High‐Current Ion Implanter

The SHX‐III system, categorized as a single‐wafer high‐current ion implanter, has been developed by SEN Corporation in order to meet all the requirements for high dose and relatively high mid‐dose applications, including high‐tilted multi‐step implantation. Recently the three major advanced device types, namely logic devices, memory and imagers, started to require high‐current ion implanters in diverse ways. The SHX‐III is designed to fulfill such a variety of requirements in one system. The SHX‐III has the same end station as the MC3‐II/WR, SEN’s latest medium current implanter, which has a mechanical throughput of 450 WPH. This capability and precise dose control system of the SHX‐III causes dramatic productivity enhancement for application of mid‐high dose, ranged between 5E13 to 2E14 atoms/cm2, usually performed by medium current ion implanters. In this paper the concept and performance of the SHX‐III will be described, concerning influence of device characteristics. A concept and performance data of ...