Improving carrier mobility and reliability characteristics of high-k NMOSFET by using stacked Y2O3/HfO2 gate dielectric

To overcome the issues of mobility degradation and charge trapping in the high-k MOSFET, a stacked Y 2 O 3 (top)/HfO 2 (bottom) multi-metal gate dielectric with TaN gate has been developed. Compared to the HfO 2 reference, the new dielectric shows similar scalability, but superior device performance and reliability characteristics. Channel mobility, fast transient charge trapping, bias temperature instability, and stress induced leakage current have been improved for Y 2 O 3 /HfO 2 device