Mask aspects of EUVL imaging at 27nm node and below

EUVL requires the use of reflective optics including a reflective mask. The mask consists of an absorber layer pattern on top of a reflecting multilayer, tuned for 13.53 nm. The EUVL mask is a complex optical element with many parameters contributing the final wafer image quality. Specifically, the oblique incidence of light, in combination with the small ratio of wavelength to mask topography, causes a number of effects which are unique to EUV, such as an HV CD offset. These so-called shadowing effects can be corrected by means of OPC, but also need to be considered in the mask stack design. In this paper we will present an overview of the mask contributors to imaging performance at the 27 nm node and below, such as CD uniformity, multilayer and absorber stack composition, thickness and reflectivity. We will consider basic OPC and resulting MEEF and contrast. These parameters will be reviewed in the context of real-life scanner parameters both for the NXE:3100 and NXE:3300 system configurations. The predictions will be compared to exposure results on NXE:3100 tools, with NA=0.25 for different masks. Using this comparison we will extrapolate the predictions to NXE:3300, with NA=0.33. Based on the lithographic investigation, expected requirements for EUV mask parameters will be proposed for 22 nm node EUV lithography, to provide guidance for mask manufacturers to support the introduction of EUV High Volume Manufacturing.