Partially-depleted silicon-on-insulator triode structure

The invention provides a partially-depleted silicon-on-insulator triode structure. The partially-depleted silicon-on-insulator triode structure comprises a buried oxygen layer, a collector electrode region, a base region, an ultra-shallow trench isolation region, a base electrode region and a collector electrode contact region, wherein the buried oxygen layer is arranged on a substrate, the collector electrode region is arranged on the buried oxygen layer, the base region is located on the collector electrode region, the ultra-shallow trench isolation region and the base electrode region are arranged on the two sides of the base region respectively, and the collector electrode contact region is arranged on the side, opposite to the base region, of the ultra-shallow trench isolation region; the doping concentration of the collector electrode contact region is larger than that of the collector electrode region, the collector electrode region is connected with the collector electrode contact region, and the collector electrode contact region, the ultra-shallow trench isolation region, the base region and the base electrode region are located on the surface of a silicon wafer. Moreover, the partially-depleted silicon-on-insulator triode structure further comprises a polycrystalline silicon emitting electrode arranged on the surface of the silicon wafer.