3D-analysis of semiconductor structures by electron tomography

The analysis of advanced nano-devices by the classical 2D imaging with transmission or scanning transmission electron microscopy suffers from projection effects over the sample thickness that result in e.g. blurring due to interfacial roughness or superposition of different structures. Electron tomography allows to overcome these problems. The method involves the acquisition of tilted series of 2D-images, the accurate alignment of these images and the 3D volume reconstruction. Slicing in any direction through this volume yields sections through the device structure with resolution of a few nanometer. The methodology is discussed and illustrated with some case studies.