Common base amplifier with 7-dB gain at 176 GHz in InP mesa DHBT technology

We report common base power amplifiers designed for 140-220 GHz frequency band in InP mesa double heterojunction bipolar transistor (DHBT) technology. A single stage common base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.77 dBm output power with 5-dB associated power gain at 172 GHz. The two-stage common base amplifier exhibited 8.1 dBm output power with 6.35 dB associated power gain at 176 GHz and demonstrated 9.13 dBm of saturated output power. This two stage common base amplifier exhibited 10.3 dBm output power with 3.48-dB associated power gain at 150.2 GHz.