Structural and Electrical Properties of Epitaxial Nb-Doped SrTiO3 Film Deposited on Si ( 100 ) Substrate

The structural and electrical properties of Nb-doped SrTiO 3 /TiN/Si heteroepitaxial structure prepared by a pulsed laser deposition system were characterized. Using X-ray diffraction analysis and transmission electron microscopy, it was confirmed that the Nb-doped SrTiO 3 (NbSTO) and TiN films on silicon were epitaxially grown. Based on a Rutherford backscattering spectroscopy study, a relatively high density of defects such as oxygen vacancies were observed in the NbSTO film. The Pt/NbSTO/TiN/Si structure exhibits rectifying current-voltage (I-V) characteristics, and a large hysteresis in the I-V characteristics and high resistance ratio under voltage pulse were observed.