Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy

Epitaxial growth of β-Ga2O3 was performed on (110) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Investigation of (010) substrates has revealed that (110) facets are revealed the chevron consistent features in reflection high-energy electron diffraction (RHEED) studies, which indicates (110) is a natural plane in β-Ga2O3 and exhibits atomically flat surface after Ga polishing. The growth rate dependence on Ga flux study suggests that the growth rate is not reduced on the (110) plane compared to that of (010). Atomic force microscopy (AFM) shows smooth surface morphology was obtained by growing on (110) substrates.