CdTe/InSb/α-Sn heterostructures grown by molecular beam epitaxy

Abstract MBE-grown CdTe/InSb/CdTe single quantum wells were characterized by TEM, FTIR and photoconduction. Even in the presence of In, Te related compounds and CdTe buffer-width dependent Fabry-Perot interference, a step-like quantum size effect was observed in the SQW FTIR data. The photocurrent peaks are also attributable to quantum well intersubband transitions due to higher subband energy levels. With the improvement of the CdTe/InSb interface in mind, we studied the characteristics of α-Sn layers grown on top of CdTe. TEM pictures show that the propagation of dislocation planes originating from the CdTe buffer layer is stopped at the α-Sn/CdTe heterointerface.