High Conductive P-Type Films of Si100-xAlx:H Fabricated by Co-Sputtering and Subsequent Annealing

Films of Si100-xAlx:H have been prepared by reactive co-sputtering and subsequently been annealed at 300~600°C in flowing Ar. After annealing, the electrical conductivity of the film has increased by five orders of magnitude, where p-type conductivity of the order of 100 Ω-1cm-1 has been obtained when x=10~19. X-ray diffraction has shown that the remarkable increase in the conductivity is closely related to partial crystallization of Si. Also measurements of infrared and optical absorption spectra for this system have been made.