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SiGe buried channel p-MOSFET formed by sputter epitaxy
SiGe buried channel p-MOSFET formed by sputter epitaxy
2017
Takuma Yagi
Takahiro Tsukamoto
Nobumitsu Hirose
Takafumi Kojima
Akifumi Kasamatsu
Toshiaki Matsui
Yoshinori Uzawa
Yoshiyuki Suda
Keywords:
Communication channel
MOSFET
Optoelectronics
Sputtering
Epitaxy
Materials science
Correction
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