Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices

The effects of built-in deformation and stress relaxation on the structural and optical properties for a 21-period AlN/GaN superlattice (SL) after implantation with argon ions have been studied. Upon implantation, the satellites’ peaks in the X-ray diffraction spectra shift toward the smaller angles which indicate decreasing of tensile deformation in SL by the value of Δc/c = 0.28%. The SIMS analysis showed that the sputtering rate for the initial sample decreases with depth, which is explained by the effect of varying deformation fields in SL and a faster etching of SL layers with a larger deformation magnitude. The change in the sputtering rate of individual layers of SL after implantation also correlates well with the magnitude of deformation. Implantation of Ar+ ions into SL leads to relaxation of the system and more homogeneous distribution of bond energy in individual layers of superlattice. The Raman spectra of the implanted SL are characterized with a low-frequency shoulder in the most intense band of the GaN layer E2 (high), which testifies partial stress relaxation in SL. Thus, based on a comprehensive study of the initial and implanted SL, it has been concluded that point defects that occur during implantation activate the process of dislocations nucleation in the superlattice/GaN buffer layer interface, which reduces the compressive stresses in the GaN layers of SL.