Characterization of GaN films etched using reactive ion etching technique by secondary ion mass spectrometry

Abstract We investigated GaN films etched by using reactive ion etching (RIE) technique to fabricate the GaN-based devices. The samples were grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD), and Ti/Al contacts were formed on n -GaN surfaces after etching processes. The effects of the kinds of reactive gases were evaluated by secondary ion mass spectrometry (SIMS). The results showed that in the sample etched using BCl 3 gas, the signal from boron contaminations was strongly detected at the interface between the contact metal and n -GaN, and we found that additional etching in Cl 2 plasma after etching with BCl 3 gas was essential to make a good contact.