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Growth of SiC films using tetraethylsilane
Growth of SiC films using tetraethylsilane
2004
Naoki Kubo
Tadahiro Kawase
Shuichi Asahina
Nobuyuki Kanayama
Hiroshi Tsuda
Akihiro Moritani
Koichi Kitahara
Keywords:
Metallurgy
Metalorganic vapour phase epitaxy
Materials science
Carbon
Correction
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