Radical‐assisted organometallic vapor‐phase epitaxial growth of GaAs

For the first time, radicals have been added to assist organometallic vapor‐phase epitaxial (OMVPE) growth of GaAs at low temperatures. Supplemental t‐C4H9 radicals from the pyrolysis of azo‐t‐butane [(t‐C4H9)2N2] were used to increase the growth rate of GaAs from trimethylgallium [TMGa, (CH3)3Ga] and arsine (AsH3) at temperatures as low as 390 °C. Mass spectroscopy studies show that the added radicals enhance the decomposition rates of both TMGa and AsH3. The GaAs growth rate was increased by a factor of 6 at 450 °C. The radical‐assisted OMVPE grown samples are, indeed, GaAs based on microprobe analysis. Spectra from Raman scattering experiments further confirm that the GaAs is single crystalline.