Photoluminescence of Cd1−xMnxTe films grown by metalorganic chemical vapor deposition

Cd1−x Mnx Te (CMT) films grown by metalorganic chemical vapor deposition on GaAs, CdTe/GaAs, and CdS/SnO2 /glass (CSG) have been studied at 2 and 80 K by photoluminescence (PL). Analysis of the CMT bandedge peak yields Mn concentration x and indicates the degree of stress in the films due to lattice mismatch with the substrates, which also causes a blue shift of the PL band with temperature. A CdTe buffer layer greatly reduces stress and resulting defects. PL spectra from polycrystalline CMT films on commercial CSG wafers, reported for the first time, show a strong band near 1.62 eV which may represent states at the CMT‐CdS interface. In CMT/CdTe/GaAs, we see evidence of front‐to‐back inhomogeneity in the CMT film which may appear in layered form.