Properties and Potential Applications of Quasi-Two-Dimensional Molybdenum Disulfide for Nanoelectronic Elements

Currently, the prospects for replacing traditional materials with quasi-two-dimensional compounds based on transition metal dichalcogenides are actively being studied. The quasi-two-dimensional molybdenum disulfide MoS2, a semiconductor with a finite band gap, can be used either as a standalone material or as a part of layered heterostructures. When creating nanosized electronics elements based on such ultrathin materials, the application of an atomic layer etching technology is of key importance. In this paper, a brief description of the properties of MoS2 monolayers in comparison with graphene and the monolayers of hexagonal boron nitride is considered. On the basis of the results of computer simulation by means of a DFT (density functional theory) method, effects caused in the MoS2 monolayer by chlorine atoms and molecules widely used in the state-of-the-art of atomic layer etching applied to silicon materials are demonstrated.