Tuning bond contents in B―C―N films via temperature and bias voltage within RF magnetron sputtering

Abstract Using radio frequency reactive magnetron sputtering technique with boron and graphite targets, amorphous B–C–N films were synthesized on the silicon (100) substrate applied with different temperatures and bias voltages. The structural and bonding characteristics of the synthesized films were characterized by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The bond contents in the B–C–N films show remarkable dependence on the bias voltage applied to the substrate at 400 °C.