High-performance microwave circuits on LaAlO3

Microwave properties of high-temperature films deposited on LaAlO3 substrate are presented. The films are grownin situ using a high-pressure single-source sputtering technique. Microwave resonators and filters are fabricated and tested. The maximum measuredQ values are 1400; the surface resistances were less than 360μΩ between 4.2 and 50 K. The filter performance was 18 dB better than a similar filter fabricated in Ag.