He+ backscattering and Auger electron spectroscopy study of the ion-induced modification of copper films deposited on single-crystal silicon

Abstract The sputtering yields of copper due to argon ion milling were measured by mega-electronvolt He + Rutherford backscattering and Auger electron spectroscopy for thin copper films deposited on 〈111〉-oriented silicon substrates. We found that recrystallization occurs in the copper films during the argon ion bombardment. The copper profile broadens at the Si-Cu interface and the spread increases with the beam energy during ion milling.