Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE

Bridge layers of AlN and Al0.25Ga0.75N have been formed on linearly grooved substrates of 6H-SiC by high temperature metal organic vapor phase epitaxy. Void assisted dislocation reduction was achieved in the formed bridge layers. Distinct difference in growth and coalescence behaviors of the Al0.25Ga0.75N layers was observed when the layers were grown on the substrates with grooves formed along 〈100〉 and 〈110〉 directions. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)