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Krishnan Balakrishnan

Meijo University

64

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1939

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MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

2011 Physica Status Solidi (a)
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Citations (21)
First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells

2010 Japanese Journal of Applied Physics
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Present Status of Deep UV Nitride Light Emitters

2008 Materials Science Forum
- Asif Khan
- Krishnan Balakrishnan
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Ultraviolet light-emitting diodes based on group three nitrides

2008 Nature Photonics
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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

2007 Journal of Crystal Growth
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

2007 Journal of Crystal Growth
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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

2007 Journal of Crystal Growth
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Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy

2007 Physica Status Solidi (c)
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

2007 Journal of Crystal Growth
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Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

2007 Japanese Journal of Applied Physics
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Citations (77)