High-Accuracy Depth Profiling in Silicon to Refine SUPREM-III Coefficients for B, P, and As

Over the past years, models have been developed which make it possible to simulate IC fabrication process steps. Programs like SUPREM-III[1] (Stanford University PRocess Engineering Model) were developed to help the designers of semiconductor devices to make their work more effective. For these programs to accurately simulate the results observed in a particular processing sequence, some default coefficient values of the physical models have to be refined to match those corresponding to measured characteristics, i.e. the programs have to be calibrated. For the purpose of calibrating SUPREM-III, extensive experiments were made at RCA Laboratories using Secondary Ion Mass Spectrometry (SIMS) to measure dopant distributions.