Micromagnetic simulation of tunneling magnetoresistance junctions with parallel hard bias

Tunneling magnetoresistance (TMR) films and devices were simulated to understand the response of the free layer with a parallel hard bias. In order to determine the effect of the granular hard bias material micromagnetic simulation was used to model both the hard bias and TMR material. Minimizing hysteresis and Barkhausen jumps in the response of the device involves an optimization of the spacing between the free layer and the hard bias coupled with the shape of the device edges.