Recent progress of diamond device toward power application

The state of the art of the Institut Neel research activity in the field of diamond power devices will be described and discussed. The active layers of the device are based on boron-doped monocristalline (100) diamond (with doping level varying between 1014 to 1021 cm-3) grown on Ib high temperature high pressure (HPHT) diamond substrate. The progresses done on diamond/metal interface, diamond/dielectric interface, or sharp gradient doping, permit recently the fabrication of original structures and devices, which will be detailed here (Schottky diode, boron doped δ-FET and MOS capacitance).