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E. Bustarret

Centre national de la recherche scientifique
Joseph Fourier University

177

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4323

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Selectively boron doped homoepitaxial diamond growth for power device applications

2021 Applied Physics Letters
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Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration

2018 Crystal Growth & Design
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

2018 Applied Surface Science
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Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth

2018 Nanomaterials
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Nonadiabatic Kohn Anomaly in Heavily Boron-Doped Diamond

2017 Physical Review Letters
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Phase diagram of boron-doped diamond revisited by thickness-dependent magneto-transport studies

2017 Physical Review B
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MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density

2017 Physica Status Solidi (a)
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Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

2016 Applied Physics Letters
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Band structure parameters of metallic diamond from angle-resolved photoemission spectroscopy

2015 Physical Review B
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TEM study of defects versus growth orientations in heavily boron‐doped diamond

2015 Physica Status Solidi (a)
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Citations (13)