Incorporación de Transistores Lineales de Efecto Campo en Simuladores Electromagnéticos Basados en el Método FDTD

The two-port (TP) lumped-network (LN) finite- dierence time-domain (FDTD) technique is an extension of the LN-FDTD method that permits linear TP LN to be im- plemented in a systemtic way into the FDTD framework. In this paper, the TP-LN-FDTD method is applied to mode- ling linear field-eect transistors (FETs). To this end, the exponential factor associated to the transconductance delay parameter is fitted by a rational function. This is done by using the Cauchy Method. Also an e! cient strategy is de- veloped to account for the extrinsic parameters of the FET. For validation purposes, the scattering parameters of a HJ- FET amplifier have been computed and compared with tho- se obtained by the electromagnetic simulator Agilent-HFSS used in combination with te circuital simulator ADS, and with the results provided by ADS alone.