Characterization of MN/CNx (M : Ti, Zr) Multilayer Thin Films Prepared by Ion Beam Sputtering Method

TiN/CNx and ZrN/CNx multilayered thin films were deposited on Corning#7059 glass substrates by a dual ion beam sputtering (IBS) system with an Ar ion source for sputtering the target and a N2 ion source for bombarding the substrate. The multilayered thin films were deposited by alternately sputtering Ti or Zr and C targets. Total film thickness was 400 nm and multilayered period λ changed from 5 to 160 nm. The properties of the multilayered thin films were examined by X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), Knoop indenter, and the internal residual stress of the multilayered thin films were examined by multi-beam optical sensor (MOS).The low angle XRD patterns of the both multilayered thin films exhibited a characteristic of long-range modulation structure. TiN/CNx multilayered films consisted from microcrystalline TiN and amorphous CNx exhibited an increasing of TiN crystallization and a strong TiN (200) preferred crystal orientation. The deposited multilayered thin films indicated a maximum value in hardness and the large internal residual stress generation in a function of the multilayered periods λ.