A Monte Carlo calculation of the voltage-current curves for GaxIn1−xSb solid solutions with allowance for scattering in the alloy

Monte Carlo calculations have been performed for the electron drift velocity in relation to electric field strength for certain GaxIn1−xSb compositions with allowance for scattering in the alloy. A three-valley model for the band structure is used. A study has been made of the effects of scattering in the alloy and at ionized impurities on the Vdr(E) dependence. It is shown that scattering in the alloy in some cases can increase the ratio of the threshold and saturation drift velocities. An ionized impurity increases the saturation velocity. The reasons for these effects are discussed. The optimum composition from the viewpoint of using the Gunn effect is Ga0.6In0.4Sb, and the characteristics of these are substantially better than that of GaAs.