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G. F. Karavaev

Tomsk State University

55

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Relativistic Corrections to the Theory of Nanostructures

2014 Russian Physics Journal
- G. F. Karavaev
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Analysis of boundary conditions for the envelope functions of GaN/InGaN(0001) heterostructures

2012 Russian Physics Journal
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A study of the GaAs/AlAs(001) superlattice spectrum within the abrupt- and smooth-boundary models

2010 Russian Physics Journal
- G. F. Karavaev
- S. N. Grinyaev
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Novel IR Photodetectors Based on GaN/AlGaN HEMT with QWs or QDs in the Barrier

2007 International Siberian Conference on Control and Communications
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New IR Photodetector Based on GaN QWs' or QDs' Located in Barrier of AlGaN/GaN Hemt Structure

2007 CriMiCo | International Crimean Conference Microwave and Telecommunication Technology
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Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

2006 Semiconductors
- G. F. Karavaev
- V. N. Chernyshov
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A model for describing hole scattering at GaAs/AlAs(001) heterointerfaces

2005 Semiconductors
- G. F. Karavaev
- V. N. Chernyshov
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The Effects of the Self-Consistent Field of Electrons and Γ–X-Intervalley Scattering on Resonant Tunneling in Double-Barrier Structures

2003 Russian Physics Journal
- G. F. Karavaev
- A. A. Voronkov
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Special features of electron scattering at AlxGa1−xAs/AlAs(001) interfaces

2003 Semiconductors
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Electronic and optical properties of AlAs/AlxGa1−xAs(110) superlattices

2003 Semiconductors
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