Comparison between CoSi2 and TiSi2 as dopant source for shallow silicided junction formation

Abstract Self-aligned silicidation technologies, based upon TiSi 2 (and CoSi 2 ) have been widely investigated during recent years. Junction spiking and limited thermal stability of the dopant concentration at the silicide/Si interface are important limitations of the technique of conventional formation of silicided junctions. Therefore, the diffusion of dopants from implanted silicide is compared for CoSi 2 and TiSi 2 . Excellent diode integrity and low contact and series resistances are obtained for diffusion from CoSi 2 , whereas the diffusion from TiSi 2 is strongly restricted by metal-dopant compound (TiB 2 and TiAs) formation.