Volume changes of silicon thin surface layers during high dose oxygen implantation

Abstract Surface profile and Auger electron spectrometry measurements were used to monitor the swelling and sputtering of oxide layers formed by 40 keV 16 O 2 + ion implantation of single-crystal silicon samples (all doses below are given for O + ions). As the implanted dose increases, the surface level of the implanted region rises with respect to that of the non-implanted region. This rise is found to be due to swelling, probably resulting from oxidation. For a dose of 2.5 × 1 o 17 cm −2 the maximum positive displacement of 30 nm is registered. For still higher doses the implanted surface level falls. After annealing, a layer shrinkage of about 10% in oxide layers formed by ion implantation was measured.