Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

Abstract Synchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single-crystal wafers, both prior and subsequent to a 60 s rapid thermal processing (RTP) treatment at 1050°C. Among the effects observed were: dislocation glide and multiplication; and the enhancement of the strain field associated with A-type swirl defects.