Method of manufacturing a thin film solar cell

The present invention is a step of forming a front electrode layer on a substrate; The step of forming the front electrode layer on a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer in turn; 7 to 1:10: the ratio of the H According to the invention, during the step of the amorphous silicon constituting the I-type semiconductor layer deposited by plasma enhanced chemical vapor deposition process, by optimizing the temperature of the content condition of the material gas, pressure conditions in the chamber, or the substrate, the resulting amorphous silicon the unbonded sites or Si-H Thin-film solar cell, deterioration