Electrical properties of bulk BSCCO/IN interfaces

Abstract The influence of Ag-doping and Ag sputtering on electrical properties of bulk BSCCO/In interfaces were examined. In Ag-doped and undoped samples, Rc were ∼ 10 −6 ω cm 2 and ∼ 10 −3 ω cm 2 , respectively. While Rc of Ag-doped samples showed positive dependency on magnetic field, there was no dependency in undoped samples. Ar ion beams ethcing, Ag sputtering with moderate film thickness and anneal treatments to an undoped sample significantly decreased Rc (∼ 10 −6 ω cm 2 ).