InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-all-around (GAA) MOSFETs with d = 12–15 nm are demonstrated. I on = 314 µA/µm, and S sat =68 mV/dec was achieved at V dd = 0.5 V (I off = 0.1 µA/µm). Highest g m measured is 2693 µS/µm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between g m , R on , and I min are discussed.