NiO:Ag/TiOx heterogeneous pn junction diode

The invention discloses a NiO:Ag/TiOx heterogeneous pn junction diode, which at least comprises a pn junction and an ohmic contact electrode, wherein the pn junction is a heterogeneous pn junction which is obtained by growing a p-type NiO:Ag thin film and an n-type TiOx thin film on a Si substrate. The NiO:Ag/TiOx heterogeneous pn junction diode is prepared on the Si substrate by a magnetic sputtering process; and finally an electrode is fabricated on the pn junction by a magnetic sputtering method or a thermal evaporation method. The heterogeneous pn junction diode disclosed by the invention has relatively high reverse breakdown voltage and relatively high forward current density; and the preparation method is simple in process.