Response of Nerve Cell to Inhibitor Recorded by Aluminium-Gallium-Nitride FET

In this work we report on the recording of extracellular potential of NG108-15 nerve cells as response to diisopropylfluorophosphate (DFP) using an open gate aluminium gallium nitride/gallium nitride (AlGaN/GaN) field effect transistor. The biocompatibility study of our GaN materials with NG108-15 nerve cells shows a proliferation rate of about 95%. The DFP was added to the medium with and without adherent cells and we record the source-drain current (IDS) of the AlGaN/GaN field effect transistor versus time. The cells react very differently to the inhibitor in the case of repeated titrations of the DFP inhibitor. A saturation concentration was determined, above which no further cell reaction was detectable. Sensor reaction without cells exhibits a clearly distinguishable behavior.