Structure and electrical transport properties of Pb-doped copper nitride (Cu3N:Pb) films

Abstract Pb-doped copper nitride (Cu 3 N:Pb) films were prepared on monocrystalline silicon through reactive magnetron sputtering by using high-purity Cu and Pb as targets. The surface morphology, microstructure, and electrical parameters of the Cu 3 N:Pb films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and Hall effect analyses. The Cu 3 N:Pb films possess typical anti -ReO 3 structure. The ratio of Cu to N in the films is slightly higher than 3:1. After Pb doping, the carrier concentration of the films changes greatly, but its carrier mobility does not remarkably change. This finding could be due to the Fermi level and the effective barrier change when the carrier concentration in the films changes. Overall, a film material with good electrical properties can be obtained by reasonably adjusting lead content in the Cu 3 N:Pb films.