Application of ELN-200 in Deep X-ray Lithography

Abstract The negative-tone E-beam resist ELN-200 was developed for thin film patterning in the 80s of the 20th century, which demonstrated sensitivity to X-rays. In the present work, the application of the resist to the deep X-ray lithography at the VEPP – 3 synchrotron source was studied. The contrast and the sensitivity of the resist to X-rays were found to be 1.7 and approx. 100 J/cm 3 , respectively. The conditions of both forming of thick resist layers and manufacturing of high-aspect-ratio microstructures using hard X-rays are determined. Microstructures up to 65 um high have been manufactured.