Characteristics of SWIR diodes of HgCdTe/CdTe/GaAs grown by metal organic vapor phase epitaxy

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxially (MOVPE) grown n on p HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and CdZnTe surface passivation. The photodiode forward and reverse current-voltage characteristics, as well as the temperature dependence of the zero-bias dynamic resistance, were measured in the temperature range of 100-300 K. The devices are generation-recombination limited up to 250 K. The zero bias dynamic resistance area products at 200 and 300 K were low, 1 × 10 6 and 2.5 x 10 2 Ω cm 2 , respectively. The relative spectral response cut off wavelength of device at 300 K was 2.5 μm.