Mobility-enhanced FET and Wakeup-free Ferroelectric Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application

We have developed and integrated mobility-enhanced FET and wakeup-free ferroelectric capacitor by using Sn-doped InGaZnO, and demonstrated 1T1C FeRAM cell operation for 3D embedded RAM application, for the first time. We have also studied the impact of thin-film access transistor on 1T1C cell operation, and investigated the physics of mobility enhancement. The proposed memory technology will enable high-density and energy-efficient computing by the proximity of processor core and memory in monolithic 3D integration.