Simulation of SiO2 build-up in silicon under oxygen bombardment

Abstract We have developed a method to simulate the oxygen saturation in oxygen bombarded silicon at near-normal incidence, which is easily introduced in our implantation/sputtering calculation frame, allowing an efficient simulation of this phenomenon. The method states a limit to the allowed maximum implantation rate, depending on the oxygen concentration and assumes a high mobility of the oxygen in the oxide. Here, we explain this method and show the calculation parameters influence on the 0°, 5 keV, O 2 + case. The obtained oxide width lays in the experimentally measured range, as well as the sputtering yield’s transition dose. We also observe that the latter is related to the formation of the final shape of the concentration profiles at the surface, while the outdiffusion yield’s transition dose is linked to the end of the oxide growing. However, more refined and diverse measurements are needed for a precise determination of the parameters’ values.