Processing method of sputtering for tantalum coil and the coil

[Abstract] A tantalum coil disposed between the substrate and the sputtering target, a surface roughness Rz of the surface of the coil is not less 150μm or more and the transverse direction 15~30TPI (Threads per inch), the vertical direction 10 sputtering tantalum coil, characterized in that it comprises an uneven is 30TPI. In tantalum coil disposed between the substrate and the sputtering target, the sputtering particles deposited on the surface of the coil is separated, the flakes adhered scattered on the substrate surface, to be a cause of particle generation and arcing to prevent, which measures to suppress the flaking of sputtered particles deposited on the surface of the coil take, thereby improving the quality and productivity of the electronic component, a semiconductor device and a device, stably and to provide a technique capable of providing. .FIELD 1