InGaAs quantum wire intermediate band solar cell

Intermediate band solar cells were realized using a GaAs (311)A p-i-n junction with Si as both the p- and n-type dopant, where the intermediate band was realized with a stack of InGaAs quantum wires. This quantum wire photovoltaic device demonstrates a non-trivial increase in solar cell efficiency over a reference p-i-n GaAs (311)A junction resulting from a significant increase in short circuit current and an only slight decrease in open circuit voltage. Presented are optical and electrical characterizations of these devices.